Qualcomm Technologies today announced that Samsung Electronics will manufacture their latest Snapdragon processor 835 using 10-nanometer (nm) FinFET process technology.
Snapdragon 835 follows the Snapdragon 820/21 processor and is expected to ship in commercial devices in the first half of 2017.
Keith Kressin, senior vice president, product management, Qualcomm Technologies. Inc said, “Using the new 10nm process node is expected to allow our premium tier Snapdragon 835 processor to deliver greater power efficiency and increase performance while also allowing us to add a number of new capabilities that can improve the user experience of tomorrow’s mobile devices.â€
In October, Samsung had announced they are the first in the industry to enter mass production of 10nm FinFET technology. Compared to its 14nm FinFET predecessors, Samsung claims that 10nm technology allows up to a 30% increase in area efficiency with 27% higher performance or up to 40% lower power consumption.
It is expected that, using 10nm FinFET, the Snapdragon 835 processor will offer a smaller chip footprint, giving OEMs more usable space inside upcoming products to support larger batteries or slimmer designs. Process improvements, combined with a more advanced chip design, are expected to bring significant improvements in battery life.
Jong Shik Yoon, executive vice president and head of foundry business, Samsung said, “This collaboration is an important milestone for our foundry business as it signifies confidence in Samsung’s leading chip process technologyâ€
No further information about the Snapdragon 835 was reveled by the company . It is expected that insights about the latest processor will be shared at CES in January.